Product introduction of rectifier diode

A rectifier diode is a semiconductor device used to convert alternating current into direct current. The most important characteristic of a diode is its unidirectional conductivity. In the circuit, current can only flow in from the positive electrode of the diode and out from the negative electrode. It usually consists of a PN junction with positive and negative terminals. Its structure is shown in Fig. 2. The carriers in the p region are holes and the carriers in the N region are electrons, forming a certain potential barrier between the p region and the N region. When the applied voltage makes the voltage of the p region positive with respect to the N region, the potential barrier decreases, and stored carriers are generated near both sides of the potential barrier, which can pass through large current and have a low voltage drop (typical value is 0.7V), which is called the forward conduction state. If the opposite voltage is applied to increase the potential barrier, it can withstand high reverse voltage and flow a small reverse current (called reverse leakage current), which is called reverse blocking state. The rectifying diode has obvious unidirectional conductivity. The rectifying diode can be made of semiconductor germanium or silicon. Silicon rectifier diode has high breakdown voltage, small reverse leakage current and good high temperature performance. Generally, high-voltage and high-power rectifying diodes are made of high-purity monocrystalline silicon (it is easy to reverse breakdown when doped more). This device has a large junction area and can pass a large current (up to thousands of Amperes), but its working frequency is not high, generally below several tens of kHz. Rectifying diodes are mainly used in various low-frequency half wave rectifying circuits. If full wave rectification is required, it needs to be connected into a rectifier bridge.